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Heat Conducting AlN Aluminum Nitride Ceramic Substrate for LED Gasket

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Ami Industre Material Co., Ltd

Room 2303, Jun Ning Building 1, No.213 FuNing Road, ChanCheng District, Foshan, Guangdong Pro, CHINA Foshan Guangdong
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Quick Information

  • Place of Origin: China
  • Material : Aluminum Nitride
  • Type : Insulating Ceramics
  • :


1.5*14*15 Heat conducting AlN aluminum nitride ceramic substrate for LED gasket

Aluminum nitride ceramic substrate thermal conductive performance is very good, is the field of thermal conductivity of thermal conductivity performance is one of the best material, has excellent thermal conductivity aluminum nitride ceramics (7-10 times of alumina ceramics), low dielectric constant and dielectric loss, reliable insulation performance, good mechanical performance, non-toxic, high temperature resistance, resistance to chemical corrosion, and close to the thermal expansion coefficient of silicon, as a new generation of ceramic material, more and more get the attention of people and attention.

aln substrate Performance index

1.The thermal conductivity is high ( about 320W / m · K ) , close to BeO and SiC , it is more than 5 times of Al2O3 , and the thermal expansion coefficient ( 4.5 × 10 - 6 ℃ ) of 

2.Matches with Si ( 3.5 -4 × 10 - 6 ℃ ) and GaAs ( 6 × 10 - 6 ℃ ) .

3.All kinds of electrical properties (dielectric constant, dielectric loss, body resistivity, dielectric strength) are excellent.

4.The flexural strength is higher than that of Al2O3 and BeO ceramics and can be sintered under atmospheric pressure.5.Good optical transmission characteristics;6.Non-poisonous

The product application

1 hybrid integrated circuit interconnection substrate,

2. Microwave devices,

3. Photoelectric communication,

4. Sensors,

5. MCM,

6. Photoelectric device substrate,

7. Ceramic carrier,

8 laser carrier,

9. Chip capacitor,

10 x refers to capacitance and spiral inductance, etc.

Packaging & Delivery

  • Delivery Lead Time : 5 days for ready goods
  • Supply Ability : 60,000 pices per Month

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